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| Replaced by PVD13N Data Sheet No. PD10024E Series PVD13 Microelectronic Power IC BOSFET(R) Photovoltaic Relay Single-Pole, 500mA, 0-100V DC General Description The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED). The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. The PVD can switch analog signals from thermocouple level to 100 volts peak DC. Signal frequencies into the RF range are easily controlled and switching rates up to 2kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies. Unique silicon technology developed by International Rectifier forms the heart of the PVD. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay. This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness. Features BOSFET Power IC 1010 Operations 300sec Operating Time 3 milliwatts Pick-Up Power 1000V/sec dv/dt Bounce-Free 8-pin DIP Package -40C to 85C UL recognized s s s s s s s s s TE LE SO OB Part Identification Part Number PVD1352 0 - 100V PVD1354 5 mA Operating Voltage (DC) Sensitivity Off-State Resistance 108 Ohms 1010 Ohms (BOSFET is a trademark of International Rectifier) 5AHEAI 8,! 2 Replaced by PVD13N Electrical Specifications (-40C TA +85C unless otherwise specified) INPUT CHARACTERISTICS Minimum Control Current (see figures 1 and 2) For 300mA Continuous Load Current For 400mA Continuous Load Current For 150mA Continuous Load Current Maximum Control Current for Off-State Resistance at 25C Control Current Range (Caution: current limit input LED. See figure 6) Maximum Reverse Voltage PVD1352 2.0 5.0 5.0 10 PVD1354 Units DC mA@25C mA@40C mA@85C A(DC) mA(DC) V(DC) 2.0 to 25 7.0 OUTPUT CHARACTERISTICS Operating Voltage Range Maxiumum Load Current 40C (see figures 1and 2) Response Time @25C (see figures 7 and 8) Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC Max. On-state Resistance 25C (Pulsed) (fig. 4) 200 mA Load, 5mA Control Min. Off-state Resistance 25C @ 80 VDC (see figure 5) Max. Thermal Offset Voltage @ 5.0mA Control Min. Off-State dv/dt Output Capacitance TE LE SO OB PVD1352 PVD1354 0 to + 100 500 300 50 s s 1.5 10 8 Units V(PEAK) mA(DC) 10 10 0.2 volts V/s 1000 12 pF @ 50VDC GENERAL CHARACTERISTICS (PVD1352 and PVD1354) Dielectric Strength: Input-Output Insulation Resistance: Input-Output @ 90V DC Maximum Capacitance: Input-Output Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) Ambient Temperature Range: Operating Storage 2500 1012 @ 25C - 50% RH 1.0 +260 -40 to +85 -40 to +100 Units VRMS pF C 2 5AHEAI 8,! 2 Replaced by PVD13N Max. Load Current (mA) Figure 1. Current Derating Curves TE LE SO OB Ambient Temperature (C) ILED (mA) RDS (on) (Normalized to 25C) Load Current (mA) Figure 2. Typical Control Current Requirements Load Current (mA) VDS (Volts) Figure 3.Typical On Characteristics Ambient Temperature (C) Figure 4. Typical Normalized On-Resistance 3 5AHEAI 8,! 2 Replaced by PVD13N Ambient Temperature (C) Figure 5. Normalized Off-State Leakage TE LE SO OB LED Forward Voltage Drop (Volts DC) Figure 6. Input Characteristics (Current Controlled) Figure 8. Delay Time Definitions ILED (mA) Delay Time (microseconds) Figure 7.Typical Delay Times 4 Input Current (mA) IDOff/IDOff 25C 5AHEAI 8,! 2 Replaced by PVD13N Normalized Control Threshold Current Figure 9. Typical Control Threshold and Transfer Ratio Wiring Diagram TE LE SO OB Ambient Temperature C VDS Drain to Source Voltage Typical Capacitance (picofarads) Normalized Transfer Ratio Figure 10. Typical Output Capacitance 5 5AHEAI 8,! 2 Replaced by PVD13N Case Outline (Dimensions in millimeters (inches)) TE LE SO OB Mechanical Specifications: Package: 8-pin DIP Tolerances: .015 (.38) unless otherwise specified Case Material: molded epoxy Weight: .07 oz. (2 gr.) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ Data and specifications subject to change without notice. 12/6/2000 6 |
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